Author: Horino, K.
Paper Title Page
TUPTS034 Development of Low Inductance Circuit for Radially Symmetric Circuit 2013
  • T. Takayanagi, K. Horino, T. Ueno
    JAEA/J-PARC, Tokai-mura, Japan
  Radiation symmetric type circuits using semiconductors of SIC-MOSFETs, one of next generation semiconductors, are composed of circuits in which many semiconductor switches are multiplexed in series and in parallel. Since the lengths of all parallel circuits are equal, the output waveform will not be distorted due to timing jitter or level change. This circuit is useful for outputting the waveform of ultrafast short pulse. Therefore, we have developed a circuit that achieves further low inductance by making the power transmission circuit into a double circular ring structure equal to the coaxial shape. Compare the inductance value obtained from the structure and the output waveform. In addition, we compare the calculation and the actual measurement in the actual test and present the verification result of the developed circular ring structure.  
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About • paper received ※ 01 May 2019       paper accepted ※ 23 May 2019       issue date ※ 21 June 2019  
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