Author: Divan, R.
Paper Title Page
TUPTS084 Performances of Silicon-Based Field-Emission Cathodes Coated with UltraNano Crystalline Diamond 2117
  • O. Mohsen, V. Korampally, A. Lueangaramwong, P. Piot, V. Valluri
    Northern Illinois University, DeKalb, Illinois, USA
  • R. Divan, A.V. Sumant
    Argonne National Laboratory, Argonne, Illinois, USA
  • P. Piot
    Fermilab, Batavia, Illinois, USA
  Funding: Work supported by NSF grant PHY-1535401 and DOE award DE-SC0018367 with NIU
Field-emission electron sources have been considered as possible candidates for the production of bright or high-current electron bunches. In this paper, we report on the experimental characterization of silicon-based field-emitter arrays (FEA) in a DC high voltage gap. The silicon cathodes are produced via a simple self-assembling process. The measurement reported in this paper especially compares the field-emission properties of a nanostructured and planar diamond-coated Si-based cathode.
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About • paper received ※ 17 May 2019       paper accepted ※ 23 May 2019       issue date ※ 21 June 2019  
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