Author: Fukuda, K.
Paper Title Page
FRXXPLM3 Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFET 4364
  • K. Okamura, F. Naito, K. Takayama
    KEK, Ibaraki, Japan
  • K. Fukuda, H. Kitai, K. Sakamoto
    AIST, Tsukuba, Ibaraki, Japan
  • T. Kaito
    Chiba Institute of Technology, Narashino, Chiba, Japan
  • D. Kumamoto
    Nagaoka University of Technology, Nagaoka, Niigata, Japan
  • S. Lim, A. Tokuchi
    Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
  Funding: A part of this work has been implemented under a joint research project of Tsukuba Power Electronics Constellation (TPEC).
To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. As to gate charge characteristics, required electric charge to increase gate source voltage from 0 V to 20 V was about 80 nC. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. A 14 kV-490 A-5 us pulse with a rise time of 430 ns in the long pulse mode and a 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse mode were successfully demonstrated. This switch will be installed as a turn-off switch for the injec-tion ES kicker in the KEK-DA.
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About • paper received ※ 15 May 2019       paper accepted ※ 21 May 2019       issue date ※ 21 June 2019  
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