Author: Spentzouris, L.K.
Paper Title Page
TUPTS070 Systematic Benchmarking of a Planar (N)UNCD Field Emission Cathode 2083
  • J.H. Shao, M.E. Conde, W. Liu, J.G. Power, E.E. Wisniewski
    ANL, Argonne, Illinois, USA
  • S.V. Baryshev, M.S. Schneider
    Michigan State University, East Lansing, Michigan, USA
  • G. Chen
    IIT, Chicago, Illinois, USA
  • K. Kovi
    Euclid TechLabs, LLC, Solon, Ohio, USA
  • L.K. Spentzouris
    Illinois Institute of Technology, Chicago, Illinois, USA
  Planar nitrogen-incorporated ultrananocrystalline diamond, (N)UNCD, is a unique and attractive field emission source because of the capability to generate high charge beam, the simplicity of production without shaped emitters, and the ease of handling with moderate vacuum requirement. In the presented study using an L-band normal conducting single-cell rf gun, a (N)UNCD cathode has been conditioned to 42 MV/m with a well-controlled manner and reached a maximum charge of 15 nC and an average emission current of 6~mA during a 2.5 us emission period. The systematic study of emission properties during the rf conditioning process illustrates the tunability of (N)UNCD in a wide range of surface gradients. This research demonstrates the versatility of (N)UNCD cathode which could enable multiple designs of field emission rf injector for industrial and scientific applications.  
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About • paper received ※ 20 May 2019       paper accepted ※ 22 May 2019       issue date ※ 21 June 2019  
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